Composite back-etch/lift-off stencil for proximity effect minimi

Details Composite back-etch/lift-off stencil for proximity effect minimi Composite back-etch/lift-off stencil for proximity effect minimi

1984-10-01

1985-12-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29591, 156652, 156656, 1566591, 1566611, 204192E, 357 5, 357 71, 427 89, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

045604355

ABSTRACT:
This composite back-etch/lift-off stencil method avoids the uncontrolled changes in the properties of contacts in small devices caused by the close proximity of the lift-off resist stencil to the contact area during the precleaning, surface preparation and metal deposition processes. This method limits the area of the wafer exposed to back-etching and thus restores the freedom of choice of contact metallurgy. Back-etching is only applied in the areas of the wafer near to the contact holes; lift-off techniques are used for the rest of the integrated circuit.

REFERENCES:
patent: 3858304 (1975-01-01), Leedy et al.
patent: 3907620 (1975-09-01), Abraham et al.
patent: 3982943 (1976-09-01), Feng et al.
patent: 4026742 (1977-05-01), Fujino
patent: 4341850 (1982-07-01), Coane
R. F. Broom, "Niobium Tunnel Junction Fabrication," IBM Technical Disclosure Bulletin, vol. 20, No. 5, Oct. 1977, p. 1973.
P. Chaudhari, "Composite Metallurgy Devices," IBM Technical Disclosure Bulletin, vol. 23, No. 4, Sep. 1980, p. 1678.
S. M. Faris et al., "Josephson Logic Circuit Process Using Edge Junctions," IBM Tech. Discl. Bulletin, vol. 25, No. 9, Feb. 1983, pp. 4602-4606.

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