Components for substrate processing apparatus and...

Details Components for substrate processing apparatus and... Components for substrate processing apparatus and...

2005-11-10

2011-11-15

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S410000, C156S345190, C118S105000

Reexamination Certificate

active

08058186

ABSTRACT:
A focus ring is shaped by cutting off a silicon carbide body formed by a sintering method or a CVD method. The shaped focus ring is exposed to a plasma generated from at least one of a carbon tetra fluoride gas and an oxygen gas for producing impurities, and the impurities are introduced to void-like defects existing in the vicinity of a surface of the focus ring. Subsequently, positrons are injected in the vicinity of the surface of the focus ring into which the impurities are introduced, and the defect density in the vicinity of the surface of the focus ring is detected by the positron annihilation method.

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Office Action issued May 17, 2011, in Chinese Application No. 200710165026.1, with English Translation.

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