Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-03-01
2011-03-01
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S291000, C257S292000, C257S443000, C257S444000, C257S447000, C257S461000, C257SE27133, C257SE31053, C257SE21564, C438S080000
Reexamination Certificate
active
07898052
ABSTRACT:
A component comprising a semiconductor junction (HU) is proposed which is formed from crystalline doped semiconductor layers. A semiconductor circuit (IC) is formed on the surface of the component, and a diode is formed internally and directly below the circuit. Integrated circuit and diode are connected to one another and formed and integrated diode component, in particular a photodiode array.
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DE10306295 (machine translation).
XP-002375073, M.K. Emsley et al., “Realization of High-Efficiency 10 GHz Bandwidth Silicon Photodetector Arrays for Fully Integrated Optical Data Communicatin Interfaces”, pp. 47-50.
Prantl Anton
Schrank Franz
Stowasser Rainer
austriamicrosystems AG
Chen Yu
Guy Joseph T.
Jackson, Jr. Jerome
Nexsen Pruet , LLC
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