Control of particles on semiconductor wafers when implanting...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S42300F, C134S021000

Reexamination Certificate

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07994487

ABSTRACT:
A method for reducing particle contamination during implantation of ions comprises providing an implantation system for implanting ions into a workpiece via an ion beam, wherein one or more components are under selective vacuum and have one or more contaminants in a first state disposed thereon. A gas is introduced to the implantation system, wherein the gas generally reacts with at least a portion of the one or more contaminants, therein transforming the at least a portion of the one or more contaminants into a second state The at least a portion of the one or more contaminants in the second state remain disposed on the one or more components, and wherein the at least a portion of the second state of the one or more contaminants generally does not produce particle contamination on the one or more workpieces.

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