Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-25
2011-01-25
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S723000, C257S724000, C257S773000, C257SE23044
Reexamination Certificate
active
07875928
ABSTRACT:
A component arrangement having an evaluation circuit for detecting wear on connections is disclosed. The component arrangement has the following features:a semiconductor body having at least one semiconductor component which is integrated in the semiconductor body and has at least one first connection zone,a first contact zone which is applied to the semiconductor body and contact-connects the at least one first connection zone in an electrically conductive manner,a contact element which is connected to the contact zone in an electrically conductive manner by means of at least one connection, the at least one contact zone having at least two contact zone sections which are arranged at a distance from one another and are each connected to the contact element in an electrically conductive manner by means of at least one connection, and an evaluation circuit being connected to the two contact zone sections.
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“Smart Highside Power Switch”, Infineon Technologies, Profet® BTS 307, Oct. 1, 2003, pp. 1-12 (12 pages).
Graf, Alfons, “Smart Power Switches for Automobile and Industrial Applications”, Infineon Technologies AG, Munich, pp. 1-8 (8 pages).
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Chiu Tsz K
Infineon - Technologies AG
Maginot Moore & Beck
Smith Zandra
LandOfFree
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