Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-05-27
2008-05-27
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23078
Reexamination Certificate
active
07378742
ABSTRACT:
A compliant interconnect is described that is useful for coupling semiconductor dies to other components. In one embodiment, the interconnect includes a base to couple to a first component and an arch extending from and integral with the base to couple to a second component. The interconnect may be formed by coating a substrate with photoresist, exposing the photoresist with a defined pattern, developing the photoresist, baking the photoresist at a first temperature for a first amount of time to reflow the photoresist, and baking the photoresist at a second higher temperature for a second amount of time to reflow the photoresist.
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Zhu et al., “Development of G-Helix Structure as Off-Chip Interconnect”, Journal of Electronic Packaging, Jun. 2004, vol. 126, pp. 237-246.
Dunaway Patrick
Hill Charles D.
Muthukumar Sriram
Ramaswamy Chandrasekhar
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Zarneke David A
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