Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2010-10-05
2011-11-08
Dang, Trung Q (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S780000, C257S782000, C257SE23003, C438S108000
Reexamination Certificate
active
08053905
ABSTRACT:
A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount.
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Joachim Kloeser et al, “High-Preformance FLICP Chip Packages With Copper Pillar Bumping”, www.globalsmt.net, Global SMT & Packaging, May 2006, p. 28-31.
Epler John E.
Krames Michael R.
Neff James G.
Schiaffino Stefano
Dang Trung Q
Koninklijke Philips Electronics , N.V.
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