Complex dielectric film and semiconductor device

Details Complex dielectric film and semiconductor device Complex dielectric film and semiconductor device

1997-06-05

1999-12-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, H01L 27108, H01L 2976, H01L 2984, H01L 31119

Patent

active

059988231

ABSTRACT:
A complex dielectric film formed as an insulation film between oppositely facing conductors is made of an insulator and a non-insulator. The insulator and the non-insulator are formed to align in series in a serial model, to contain the non-insulator in the insulator in a serial-parallel model, and to align in parallel in a parallel mode 1. The insulator may be SiO.sub.2, Si.sub.3 N.sub.4, or other like material, and the non-insulator may be a metal, semi-metal, semiconductor containing conduction electrons, organic material containing conduction electrons, or other like material. The volume ratio of the non-insulator is chosen to an appropriate value in accordance with the designed value of the effective dielectric constant.

REFERENCES:
patent: 5682041 (1997-10-01), Kawakubo et al.
patent: 5854734 (1998-12-01), Sandha et al.

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