Completely buried contact holes

Details Completely buried contact holes Completely buried contact holes

1998-03-26

1999-11-09

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257776, H01L 23485

Patent

active

059820390

ABSTRACT:
A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.

REFERENCES:
patent: 5391914 (1995-02-01), Sullivan et al.
patent: 5391921 (1995-02-01), Kudoh et al.
patent: 5519250 (1996-05-01), Numata
patent: 5543661 (1996-08-01), Sumida
patent: 5621616 (1997-04-01), Owens et al.
patent: 5698902 (1997-12-01), Uehara et al.
patent: 5834847 (1998-11-01), Jung et al.

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