Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-07-01
2008-09-02
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
Reexamination Certificate
active
07419890
ABSTRACT:
A first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor are formed using a plurality of single crystal grains, the plurality of single crystal grains being formed substantially centered on each of a plurality of starting-point portions disposed on an insulating surface of a substrate, the plurality of single crystal grains being composed of at least a first single crystal grain and a second single crystal grain adjacent to each other, with a crystal grain boundary therebetween, the first-conductivity-type thin film transistor includes at least a first-conductivity-type drain region formed adjacent to the crystal grain boundary in the first single crystal grain, the second-conductivity-type thin film transistor includes at least a second-conductivity-type drain region formed adjacent to the crystal grain boundary in the second single crystal grain, and a common electrode is provided on the crystal grain boundary to lead out outputs from the first-conductivity-type drain region and the second-conductivity-type drain region.
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Ho Anthony
Jackson Jerome
Oliff & Berridg,e PLC
Seiko Epson Corporation
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