Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-25
2007-09-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000, C257S291000, C257SE27112, C438S153000, C438S154000
Reexamination Certificate
active
10786151
ABSTRACT:
To provide a highly reliable complementary thin film transistor circuit in which deviations in characteristics of a first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor can be reduced or prevented and operated stably. A first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor are formed using single crystal grains, the single crystal grains being formed substantially centered on each of a plurality of starting-point portions provided on an insulating surface of a substrate, wherein the first-conductivity-type thin film transistor and the second-conductivity-type thin film transistor are formed by equalizing their drain current directions, and are formed in the single crystal grains in which at least channel regions of the first-conductivity-type thin film transistor and the second-conductivity-type thin film transistor have the same plane orientation.
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Budd Paul
Jackson Jerome
Seiko Epson Corporation
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