Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257S353000
Reexamination Certificate
active
07012302
ABSTRACT:
A first-conductivity-type thin film transistor and a second-conductivity-type thin film transistor are formed using a plurality of single crystal grains, the plurality of single crystal grains being formed substantially centered on each of a plurality of starting-point portions disposed on an insulating surface of a substrate, the plurality of single crystal grains being composed of at least a first single crystal grain and a second single crystal grain adjacent to each other, with a crystal grain boundary therebetween, the first-conductivity-type thin film transistor includes at least a first-conductivity-type drain region formed adjacent to the crystal grain boundary in the first single crystal grain, the second-conductivity-type thin film transistor includes at least a second-conductivity-type drain region formed adjacent to the crystal grain boundary in the second single crystal grain, and a common electrode is provided on the crystal grain boundary to lead out outputs from the first-conductivity-type drain region and the second-conductivity-type drain region.
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“Single Crystal Thin Film Transistors”, IBM Technical Disclosure Bulletin, pp. 257-258, Aug. 1993.
Ryoichi Ishihara et al., “Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grain on Glass”, Proceedings of SPIE vol. 4295, pp. 14-23, 2001.
Oliff & Berridg,e PLC
Richards N. Drew
Seiko Epson Corporation
Thomas Tom
LandOfFree
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