Complementary Si/SiGe heterojunction bipolar technology

Details Complementary Si/SiGe heterojunction bipolar technology Complementary Si/SiGe heterojunction bipolar technology

1997-05-02

1999-07-27

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438309, H01L 21331

Patent

active

059306351

ABSTRACT:
A method of manufacturing truly complementary bipolar transistors on a common substrate. The method results in the fabrication of vertical NPN and PNP transistors which have an identical structure and mode of operation, with both devices operating in the downward direction. The inventive method permits independent control of the characteristics of the two devices, producing a closely matched performance for both devices.

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patent: 5807780 (1998-09-01), Davis et al.
Wolf, S. "Bipolar and Bicmos Process Integration, Section 7.13 Complementary Bipolar (CB) Tecnology," Silicon Processing for the VLSI ERA--vol. 11, pp. 557-560, (1990).

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