Complementary semiconductor memory device

Details Complementary semiconductor memory device Complementary semiconductor memory device

1980-08-27

1982-05-18

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 24, G11C 1140

Patent

active

043308490

ABSTRACT:
Disclosed herein is a semiconductor memory device comprising a semiconductor substrate having a first conductivity type, first and second regions of a second conductivity type opposite to said first type formed in the surface of the semiconductor substrate and separated with a certain space therebetween, a third region of the first conductivity type formed in the second region, and a gate electrode formed on an insulating film on the semiconductor substrate between the first and the third regions. By applying a gate voltage to the gate electrode, charge carriers are transferred between the first and second regions in accordance with the data to be stored. The stored data is read out by applying a prescribed gate voltage to the gate electrode and by detecting the value of the current between the third region and the semiconductor substrate.

REFERENCES:
patent: 3841926 (1974-10-01), Garnache et al.
patent: 3919569 (1975-11-01), Gaensslen et al.
patent: 3968479 (1976-07-01), Goser
patent: 3971055 (1976-07-01), Arai
patent: 3974486 (1976-08-01), Curtis et al.

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