Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1988-11-01
1989-08-29
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365226, 365190, 3072961, G11C 700, G11C 1140
Patent
active
048624152
ABSTRACT:
A semiconductor device has a substrate of a first conductivity type including a well of a second conductivity type opposite to the first conductivity type. The semiconductor device comprises a bias potential generating circuit for generating a potential in the substrate or the well; a potential detecting circuit for detecting a potential of the substrate or the well and a gate circuit. The gate circuit is connected to the potential detecting circuit and to an internal circuit and applies an enable signal to the internal circuit in accordance with the detected potential of the substrate or the well. Consequently, latch-up of parasitic transistors in a CMIS-inverter circuit of the semiconductor device can be prevented.
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patent: 4337524 (1982-06-01), Parkinson
patent: 4631421 (1986-12-01), Inoue et al.
patent: 4638464 (1987-01-01), Cranford, Jr. et al.
patent: 4678941 (1987-07-01), Chao et al.
ISSCC 84/Friday, Feb. 24, 1984/Continental Ballrooms 8-9/10:45 AM "A Sub 100 ns 255K Dram in CMOS III Technology", Roger Kung et al.
Bowler Alyssa H.
Fujitsu Limited
Hecker Stuart N.
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