Complementary output resistive memory cell

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

07339813

ABSTRACT:
A complementary resistive memory structure is provided comprising a common source electrode and a first electrode separated from the common source electrode by resistive memory material; and a second electrode adjacent to the first electrode and separated from the common source electrode by resistive memory material, along with accompanying circuitry and methods of programming and reading the complementary resistive memory structure.

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