Complementary MOS field effect transistor with tunnel effect mea

Details Complementary MOS field effect transistor with tunnel effect mea Complementary MOS field effect transistor with tunnel effect mea

1997-02-13

1998-04-28

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, H01L 2976, H01L 2994

Patent

active

057448450

ABSTRACT:
In a complementary MOS field effect transistor having a dual gate electrode structure, which is improved so that an element property can be enhanced, a first gate electrode of an n channel MOSFET includes a first barrier film, and a second gate electrode of a p channel MOSFET includes a second barrier film. The first barrier film has a sufficiently small thickness so that a potential can be transmitted from a first conductive film to a first polycrystalline silicon film by means of a tunnel effect. The second barrier film has a sufficiently small thickness so that a potential can be transmitted from a second conductive film to a second silicon film by means of a tunnel effect.

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patent: 5023679 (1991-06-01), Shibata
patent: 5200630 (1993-04-01), Nakamura et al.
IBM technical disclosure Bulletin;"Underlay for Polycide Process", vol. 28, No. 9, Feb. 1986.
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IEEE Trans. on Electron Dev., vol. 40, No. 9, 1993, pp. 1675-1681 no month.
W/WNx/Poly-Si Gate Technology for Future High Speed Deep Submicron CMOS LSIs, by K. Kasai et al., 1994 IEEE, pp. 497-500 no month.

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