Complementary mis semiconductor device of dual gate structure ha

Details Complementary mis semiconductor device of dual gate structure ha Complementary mis semiconductor device of dual gate structure ha

1995-04-27

1997-05-27

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257755, 257775, H01L 2348, H01L 2976

Patent

active

056335237

ABSTRACT:
In a complementary MIS semiconductor device of a dual gate structure, an N-type polysilicon layer for an N-channel transistor and a P-type polysilicon layer for a P-channel transistor are formed on a gate oxide film and a field oxide film. A recessed portion is formed on the field oxide film in a region including a junctioning region of the N-type polysilicon layer and the P-type polysilicon layer such that thicknesses of the polysilicon layers are reduced. A continuous silicide layer is formed on the polysilicon layers. The silicide layer is thin in the recessed portion on the field oxide film and is thick on an active region of each of the transistors. In this semiconductor device of a dual gate type, it is possible to prevent impurities of the polysilicon layers of gate electrodes from being diffused in a transversal direction and restrain an increase in resistance value of each of the gate electrodes.

REFERENCES:
patent: 4609568 (1986-09-01), Koh et al.
"Dopants Redistribution in W-Policide System", Applied Physics Association, 3p-ZH-3, Spring, 1989.
"Dopants Redistribution in Dual Gate W-Polycide CMOS", Applied Physics Association, 29p-PC-27, Autumn, 1989.
"Application of Salicide Process for Symmetric CMOS", Applied Physics Association, 27a-G-9, Autumn, 1990.
"Dopant Redistribution in Dual Gate W-Polycide CMOS and its Improvement by RTA", Symp. on VLSI Technology, 1989, pp. 29-30.

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