Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
10467797
ABSTRACT:
A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.
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European Official Action issued Dec. 14, 2005, in counterpart European application, pp. 1-3, The Hague.
Kotani Koji
Ohmi Tadahiro
Sugawa Shigetoshi
Finnegan Henderson Farabow Garrett & Dunner LLP
Ohmi Tadahiro
Prenty Mark V.
Tokyo Electron Limited
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