Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-03
2009-06-09
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S067000, C257S069000, C257S350000, C257S351000, C257SE27057, C257SE27064, C257SE29273
Reexamination Certificate
active
07545008
ABSTRACT:
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.
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Chan Man Sun
Chan Philip Ching Ho
Wu Xusheng
Zhang Shengdong
Heslin Rothenberg Farley & & Mesiti P.C.
Liu Benjamin Tzu-Hung
Ngo Ngan
The Hong Kong University of Science and Technology
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