Complementary metal oxide semiconductor image sensor and...

Details Complementary metal oxide semiconductor image sensor and... Complementary metal oxide semiconductor image sensor and...

2006-12-06

2010-06-22

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27133, C977S762000, C977S814000, C977S954000

Reexamination Certificate

active

07741664

ABSTRACT:
Provided are a CMOS image sensor and a method for fabricating the same. A nanopillar is plurally formed at an upper end of a light receiving element.

REFERENCES:
patent: 6518115 (2003-02-01), Lee et al.
patent: 2004/0253759 (2004-12-01), Garber et al.
patent: 2005/0265648 (2005-12-01), Roitman et al.
patent: 2007/0105356 (2007-05-01), Wu et al.
patent: 7-235658 (1995-09-01), None

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