Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-11-20
2007-11-20
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S060000, C438S075000, C438S508000, C438S508000, C250S208100, C250S216000, C250S226000
Reexamination Certificate
active
11022858
ABSTRACT:
A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the efficiency in condensing the light by forming a multi-layered micro lens with various materials having different refractive indexes, in which the CMOS image sensor includes a plurality of photosensitive devices on a semiconductor substrate; an insulating interlayer on the plurality of photosensitive devices; a plurality of color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a first micro-lens layer on an entire surface of the color filter layers, to condense the light; and a plurality of second micro-lens layers on the first micro-lens layer in correspondence with the respective photosensitive devices, wherein the second micro-lens layer has the different refractive index from that of the first micro-lens layer.
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Dongbu Electronics Co. Ltd.
Duy Mai Anh
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