Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-15
2008-04-15
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000
Reexamination Certificate
active
07358552
ABSTRACT:
A complementary metal-oxide-semiconductor (CMOS) image sensor and a method for fabricating the same are provided. The CMOS image sensor includes: a pixel region provided with a plurality of unit pixels, each including a buried photodiode and a floating diffusion region; and a logic region provided with CMOS devices for processing data outputted from the unit pixels, wherein a self-aligned silicide layer is formed on gate electrodes and source/drain regions of the CMOS devices in the logic region while a self-aligned silicide blocking layer is formed over the pixel region.
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Notice of Preliminary Rejection dated Sep. 27, 2005 of Korean Application No. 2003-75537, filed Feb. 28, 2005.
Blakely & Sokoloff, Taylor & Zafman
Magna-Chip Semiconductor, Ltd.
Prenty Mark
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