Complementary metal oxide semiconductor device with selective do

Details Complementary metal oxide semiconductor device with selective do Complementary metal oxide semiconductor device with selective do

1997-01-30

1999-09-14

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, H01L 2976, H01L 2994

Patent

active

059526963

ABSTRACT:
A semiconductor device and fabrication thereof is disclosed in which devices are formed on two devices regions of opposite conductivity types by selectively masking and implanting the same type of dopant into active regions of both device regions. The process includes masking part of the active regions in each device region and implanting a dopant into exposed active regions in both devices regions. The number of masking, implantation and other steps required in the fabrication process are reduced by the selective masking of various active regions. Non-symmetrically doped source and drain regions may be formed on the transistors among a group which lie closest to the opposite device region.

REFERENCES:
patent: 4104784 (1978-08-01), Klein
patent: 4280855 (1981-07-01), Bertin et al.
patent: 4514894 (1985-05-01), Kawagoe
patent: 4753897 (1988-06-01), Lund et al.
patent: 5040035 (1991-08-01), Gabara et al.
patent: 5252505 (1993-10-01), Yatsuda et al.
patent: 5541548 (1996-07-01), Crafts
patent: 5633185 (1997-05-01), Yiu et al.
patent: 5648286 (1997-07-01), Gardner et al.
patent: 5759897 (1998-06-01), Kadosh et al.
Mead, C. et al. Introduction to VLSI Systems, published by Addison-Wesley Publishing Company, p. 17 (1980).
Wolf, S., Silicon Processing for the VLSI Era. vol. 2: Process Integration, published by Lattice Press, pp. 354-361 (1990).

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