Complementary metal oxide semiconductor (CMOS) image sensor

Details Complementary metal oxide semiconductor (CMOS) image sensor Complementary metal oxide semiconductor (CMOS) image sensor

2011-01-11

2011-01-11

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S293000, C257S432000, C257SE21001

Reexamination Certificate

active

07868368

ABSTRACT:
A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.

REFERENCES:
patent: 7078779 (2006-07-01), Wang et al.
patent: 7579639 (2009-08-01), Jung
patent: 2006/0033131 (2006-02-01), Kim
patent: 04-263574 (1994-04-01), None
patent: 04-310267 (1994-06-01), None

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