Complementary metal oxide semiconductor (CMOS) gate stack...

Details Complementary metal oxide semiconductor (CMOS) gate stack... Complementary metal oxide semiconductor (CMOS) gate stack...

2005-05-10

2005-05-10

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S310000

Reexamination Certificate

active

06891231

ABSTRACT:
A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

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U.S. Appl. No. 09/755,164, filed Jan. 8, 2001.

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