Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-10-11
1996-12-17
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257374, 257388, 257412, 257413, H01L 2976
Patent
active
055856594
ABSTRACT:
A method for fabricating semiconductor devices wherein polysilicon gates for complementary-type field-effect semiconductor devices are formed of polysilicon to which impurity doped simultaneously to the polysilicon deposition; the both gates having the dual N.sup.+ /P.sup.+ polysilicon gate structure, so that the both N- and P-channel transistors are formed as the surface-channel type ones; and therefore, the off-characteristic, the short channel effect, and the controllability of threshold voltage are progressed. More specifically, N- and P-channel MISFETs are provided on a common semiconductor substrate (1); N-type polysilicon (9) doped with N-type impurity is adopted as the gate electrode for the N-channel MISFET; P-type polysilicon (8) doped with P-type impurity is adopted as the gate electrode for the P-channel MISFET; and a narrow region preventing the mutual diffusion of impurities is provided between portions of respective polysilicon.
REFERENCES:
patent: 5014104 (1991-05-01), Ema
patent: 5026657 (1991-06-01), Lee et al.
patent: 5066995 (1991-11-01), Young et al.
C. K. Lau et al., "A High Performance CMOS Process With Half-Micron Gate And Novel Low-Parasitic Salicide Interconnect Scheme", Hewlett-Packard Laboratories, 1985, pp. 12-13.
J. Y.-C. Sun et al., "0.5 um-Channel CMOS Technology Optimized For Liquid-Nitrogen-Temperature Operation", IEEE, 1986, pp. 236-239.
N. Kasai et al., "0.25 um CMOS Technology Using P+ Polysilicon Gate PMOSFET", IEEE, 1987, pp. 367-370.
B. Davari et al., "A High Performance 0.25 um CMOS Technology", IEEE, 1988, pp. 56-59.
Inokawa Hiroshi
Kobayashi Toshio
Miyake Masayasu
Morimoto Takashi
Okazaki Yukio
Nippon Telegraph and Telephone Corporation
Tran Minhloan
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