Complementary metal gates and a process for implementation

Details Complementary metal gates and a process for implementation Complementary metal gates and a process for implementation

1998-06-30

2000-12-26

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257392, 257388, H01L 2978

Patent

active

061664170

ABSTRACT:
A transistor device includes a gate dielectric overlying a substrate, a barrier layer overlying the gate dielectric, and a gate electrode overlying the barrier layer. The barrier layer of the device has a physical property that inhibits interaction between the gate dielectric and the gate electrode.

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