Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2007-03-06
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S402000
Reexamination Certificate
active
09517705
ABSTRACT:
A method for making circuit device that includes a first transistor having a first metal gate electrode overlying a first gate dielectric on a first area of a semiconductor substrate. The first gate electrode has a work function corresponding to the work function of one of P-type silicon and N-type silicon. The circuit device also includes a second transistor coupled to the first transistor. The second transistor has a second metal gate electrode over a second gate dielectric on a second area of the semiconductor substrate. The second gate metal gate electrode has a work function corresponding to the work function of the other one of P-type silicon and N-type silicon.
REFERENCES:
patent: 3936860 (1976-02-01), Hill
patent: 4555842 (1985-12-01), Levinstein et al.
patent: 5559351 (1996-09-01), Takiyama
patent: 5654242 (1997-08-01), Komatsu
patent: 5675172 (1997-10-01), Miyamoto et al.
patent: 5705411 (1998-01-01), Yamanobe et al.
patent: 5719083 (1998-02-01), Komatsu
patent: 5796166 (1998-08-01), Agnello et al.
patent: 5834353 (1998-11-01), W u
patent: 5912509 (1999-06-01), Kasai et al.
patent: 5945821 (1999-08-01), Sakurai et al.
patent: 5973363 (1999-10-01), Staab et al.
patent: 6091115 (2000-07-01), Ohtani et al.
patent: 6180519 (2001-01-01), Kuroi et al.
patent: 52-014383 (1977-02-01), None
patent: 57-114281 (1982-07-01), None
patent: 59-125650 (1984-07-01), None
patent: 60-045053 (1985-03-01), None
patent: 62-126671 (1987-06-01), None
patent: 62-245658 (1987-10-01), None
patent: 3-227562 (1991-10-01), None
Merriam-Webster OnLine Dictionary, pp. 1-2, Dec. 13, 2003.
Bai Gang
Liang Chunlin
Blakely , Sokoloff, Taylor & Zafman LLP
Vu Hung
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