Complementary metal-ferroelectric semiconductor transistor struc

Details Complementary metal-ferroelectric semiconductor transistor struc Complementary metal-ferroelectric semiconductor transistor struc

1977-09-20

1979-07-10

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Ferroelectric

307288, 340149R, 365181, 365184, G11C 1140, G06G 700

Patent

active

041610385

ABSTRACT:
A complementary metal-ferroelectric-semiconductor transistor structure (MFST) in which an n-channel MFST is electrically coupled to a p-channel MFST in complementary fashion with the source of the n-channel MFST connected to the drain of the p-channel MFST and the drain of the n-channel MFST connected to the source of the p-channel MFST. The memory element is controlled in response to a polarizing voltage, and erasing voltage, a reference signal, and input signals such that the input signals are compared with respect to the reference signal. A matrix of memory elements arranged in rows and columns is also described with each of the memory elements comprised of a complementary MFST structure.

REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
patent: 4053798 (1977-10-01), Koike et al.
patent: 4063225 (1977-12-01), Stewart

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