Complementary insulated-gate field-effect transistors having imp

Details Complementary insulated-gate field-effect transistors having imp Complementary insulated-gate field-effect transistors having imp

1997-06-03

1999-10-19

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257372, 257355, H01L 2976, H01L 2994, H01L 31062, H01L 2362

Patent

active

059693916

ABSTRACT:
A semiconductor device includes an N-well arranged in the principal surface of a P-type semiconductor substrate, an N.sup.+ well contact arranged in the principal surface of the N-well, and an N.sup.+ buried region arranged to the bottom of the N-well.

REFERENCES:
patent: 4616243 (1986-10-01), Minato et al.
patent: 4683488 (1987-07-01), Lee et al.
RCJ Documents on 3rd EOS/ESD Symposium, Nov. 1993.

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