Complementary heterojunction amplifier

Details Complementary heterojunction amplifier Complementary heterojunction amplifier

1994-08-31

1998-12-22

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058523162

ABSTRACT:
A gallium arsenide amplifier (10) utilizes a P-channel heterojunction transistor (12) and an N-channel heterojunction transistor (11) connected in a stacked configuration. The gate width of the P-channel heterojunction transistor is scaled so that the transconductance of the P-channel heterojunction transistor approximately equals the transconductance of the N-channel heterojunction transistor. The gate length (44) of the N-channel heterojunction transistor is scaled so that the input impedance of the N-channel heterojunction transistor approximately equals the input impedance of the P-channel heterojunction transistor.

REFERENCES:
patent: 5329184 (1994-07-01), Redfern
Irwin, Basic Engineering CK & Analysis, pp. 332-333, 1984.
K. W. Kobayashi et al., "Complementary HBT Push-Pull Amplifier by Selective MBE", IEEE Microwave and Guided Wave Letters, vol. 2, No. 4, Apr. 1992, pp. 149-150.

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