Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-10-24
2008-09-16
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07426133
ABSTRACT:
A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.
REFERENCES:
patent: 4547866 (1985-10-01), Lutes et al.
patent: 6147922 (2000-11-01), Hurst et al.
patent: 6175525 (2001-01-01), Fulkerson et al.
patent: 6256247 (2001-07-01), Perner
patent: 6269027 (2001-07-01), Hurst, Jr. et al.
patent: 6493259 (2002-12-01), Swanson et al.
patent: 6532168 (2003-03-01), Swanson et al.
patent: 6795340 (2004-09-01), Sakimura et al.
patent: 6807086 (2004-10-01), Kajiyama
Reohr et al., Memories of Tommorow. Sep. 2002. IEEE Circuits & Devices Magazine.
Hynes Owen J.
Katti Romney R.
Reed Daniel S.
Wang Roy R.
Honeywell International , Inc.
Hur J. H.
McDonnell Boehnen & Hulbert & Berghoff LLP
Sofocleous Alexander
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