Complementary giant magneto-resistive memory with full-turn...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

07426133

ABSTRACT:
A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.

REFERENCES:
patent: 4547866 (1985-10-01), Lutes et al.
patent: 6147922 (2000-11-01), Hurst et al.
patent: 6175525 (2001-01-01), Fulkerson et al.
patent: 6256247 (2001-07-01), Perner
patent: 6269027 (2001-07-01), Hurst, Jr. et al.
patent: 6493259 (2002-12-01), Swanson et al.
patent: 6532168 (2003-03-01), Swanson et al.
patent: 6795340 (2004-09-01), Sakimura et al.
patent: 6807086 (2004-10-01), Kajiyama
Reohr et al., Memories of Tommorow. Sep. 2002. IEEE Circuits & Devices Magazine.

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