Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S405000, C257S411000, C257S645000, C257S651000, C257SE27062, C257SE27064
Reexamination Certificate
active
07087969
ABSTRACT:
A complementary field effect transistor comprises: a semiconductor substrate; an n-type field effect transistor provided on the semiconductor substrate; and a p-type field effect transistor provided on the semiconductor substrate. The n-type field effect transistor has: a first gate insulating film containing an oxide including an element selected from the group consisting of group IV metals and Lanthanoid metals, and further containing a compound of the element and a group III element; a first gate electrode provided on the first gate insulating film; and n-type source and drain regions formed on both sides of the first gate electrode. The p-type field effect transistor has: a second gate insulating film containing an oxide including an element selected from the group consisting of group IV metals and Lanthanoid metals, and including substantially no positive charge; a second gate electrode provided on the second gate insulating film; and p-type source and drain regions provided on both sides of the second gate electrode.
REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6376888 (2002-04-01), Tsunashima et al.
patent: 6525380 (2003-02-01), Shirahata et al.
patent: 6593618 (2003-07-01), Kamata et al.
patent: 6680245 (2004-01-01), King et al.
patent: 2002/0135030 (2002-09-01), Horikawa
patent: 2003/0122199 (2003-07-01), Koyama et al.
patent: 2004/0142579 (2004-07-01), Morita et al.
patent: 48-30709 (1973-09-01), None
patent: 51-45438 (1976-12-01), None
Ishihara Takamitsu
Koyama Masato
Nishiyama Akira
Ono Mizuki
Kabushiki Kaisha Toshiba
Parker Kenneth
Warren Matthew E.
LandOfFree
Complementary field effect transistor and its manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Complementary field effect transistor and its manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary field effect transistor and its manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3686606