Complementary bipolar transistors

Details Complementary bipolar transistors Complementary bipolar transistors

1997-10-10

1999-12-21

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257558, 257575, H01L 27102, H01L 29735

Patent

active

06005283&

ABSTRACT:
A complementary bipolar transistor having a lateral npn bipolar trasistor, a vertical and a lateral pnp bipolar transistor, an integrated injection logic, a diffusion capacitor, a polysilicon capacitor and polysilicon resistors are disclosed. The lateral pnp bipolar transistor has an emitter region and a collector region which includes high-density regions and low-density regions, and the emitter region is formed in an n type tub region. In the integrated injection logic circuit, collector regions are surrounded by a high-density p type region, and low-density p type regions are formed under the collector regions. The diffusion capacitor and the polysilicon capacitor are formed in one substrate. The diffusion regions except the regions formed by diffusing the impurities in the polysilicon resistors into the epitaxial layer are formed before forming the polysilicon resistors, and polysilicon electrodes are formed along with the polysilicon resistors.

REFERENCES:
patent: 5163178 (1992-11-01), Gomi et al.
patent: 5455188 (1995-10-01), Yang
patent: 5777375 (1998-07-01), Shishido
patent: 5828124 (1998-10-01), Villa

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