Complementary bipolar polysilicon emitter devices

Details Complementary bipolar polysilicon emitter devices Complementary bipolar polysilicon emitter devices

1994-11-09

1995-08-22

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257518, 257588, 257592, 257755, 437186, 437193, 437233, H01L 2904, H01L 2144

Patent

active

054442850

ABSTRACT:
Bipolar transistors and MOS transistors on a single semiconductor substrate involves depositing a single layer of polysilicon on a substrate, including complementary transistors of either or both types, and a method for fabricating same. The devices are made by depositing a single layer of polysilicon on a substrate and etching narrow slots in the form of rings around every bipolar emitter area, which slots are thereafter filled with an insulating oxide. Then, emitters and extrinsic base regions are formed. The emitters are self-aligned to the extrinsic base regions. An optional cladding procedure produces a surface layer of a silicide compound, a low resistance conductor. The resulting structure yields a high-performance device in which the size constraints are at a minimum and contact regions may be made at the top surface of the device.

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