Complementary bipolar and MOS transistor having power and logic

Details Complementary bipolar and MOS transistor having power and logic Complementary bipolar and MOS transistor having power and logic

1991-04-19

1993-01-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257556, H01L 2702, H01L 2704, H01L 2910

Patent

active

051810956

ABSTRACT:
An integrated circuit device of a first N-type epitaxial layer over a substrate, a second P-type epitaxial layer over the first epitaxial layer, and a third N-type epitaxial layer over the second epitaxial layer, with a P-type buried ground region formed in a portion of the substrate, the ground region extending from the substrate to the third epitaxial layer in a first tank region and extending through the first and second epitaxial layers. A power bipolar transistor is formed in the first tank region. P isolation areas extending from the surface of the third epitaxial layer to the P ground region isolate the bipolar transistor from other tank region on the same substrate in which N and P channel MOSFETS are formed.

REFERENCES:
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4881107 (1989-11-01), Matsushita et al.

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