Compensation component and process for producing the component

Details Compensation component and process for producing the component Compensation component and process for producing the component

2006-10-24

2006-10-24

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S330000, C257S331000, C257S339000, C257S340000, C438S268000

Reexamination Certificate

active

07126186

ABSTRACT:
A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity type disposed in the drift zone. Higher doped zones of the first type are inlaid in a weaker doped environment of the second type closer to the first electrode and higher doped zones of the second type are inlaid in a weaker doped environment of the first type closer to the second electrode. The drift zone is complementary so that, in a direction between the electrodes, a more highly doped zone of the first type adjoins a more weakly doped environment of the first type, and a more weakly doped environment of the second type adjoins a more highly doped zone of the second type.

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