Compensation component and method for fabricating the component

Details Compensation component and method for fabricating the component Compensation component and method for fabricating the component

2005-04-12

2005-04-12

Lebentritt, Michael S. (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S262000, C257S328000, C257S335000, C257S653000

Reexamination Certificate

active

06878997

ABSTRACT:
A compensation component, in which a lateral section and, at least at one end of the lateral section, a section that is inclined with respect to the surface of a drift path, includes n-conducting and p-conducting regions completely embedded in a semiconductor body without a trench. In such a case, the inclined section is formed by ion implantation through an implantation mask with an inclined edge.

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patent: 100 26 924 (2001-12-01), None

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