Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Lebentritt, Michael S. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S262000, C257S328000, C257S335000, C257S653000
Reexamination Certificate
active
06878997
ABSTRACT:
A compensation component, in which a lateral section and, at least at one end of the lateral section, a section that is inclined with respect to the surface of a drift path, includes n-conducting and p-conducting regions completely embedded in a semiconductor body without a trench. In such a case, the inclined section is formed by ion implantation through an implantation mask with an inclined edge.
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Greenberg Lawrence A.
Infineon - Technologies AG
Lebentritt Michael S.
Menz Douglas
Stemer Gregory L.
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