Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2008-05-09
2011-11-01
Nguyen, Hiep (Department: 2188)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
Reexamination Certificate
active
08051240
ABSTRACT:
Optimized verify and read pass voltages are obtained to improve read accuracy in a non-volatile storage device. The optimized voltages account for changes in unselected storage element resistance when the storage elements become programmed. This change in resistance is referred to as a front pattern effect. In one approach, the verify pass voltage is higher than the read pass voltage, and a common verify voltage is applied on the source and drain sides of a selected word line. In other approaches, different verify pass voltages are applied on the source and drain sides of the selected word line. An optimization process can include determining a metric for different sets of verify and read pass voltages. The metric can indicate threshold voltage width, read errors or a decoding time or number of iterations of an ECC decoding engine.
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Dutta Deepanshu
Lutze Jeffrey W.
Nguyen Hiep
SanDisk Technologies Inc.
Vierra Magen Marcus & DeNiro LLP
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