Compensating for coupling in non-volatile storage

Details Compensating for coupling in non-volatile storage Compensating for coupling in non-volatile storage

2007-03-27

2007-03-27

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including signal comparison

C365S189090, C365S185170, C365S185030

Reexamination Certificate

active

11099239

ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.

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