Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2005-05-03
2005-05-03
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S211000, C365S226000, C331S175000, C331S176000
Reexamination Certificate
active
06888763
ABSTRACT:
A charge pump oscillator circuit with compensation for variations in process and operating environment. The charge pump oscillator is designed with a rolloff characteristic that enables operation at both weak and strong process corners without excessive power consumption. Composite resistors in the oscillator circuit are composed of component resistors that are fabricated with different processes, e.g., implant and deposition. The resistance of the composite resistor is thus in order to provide compensation for variations in processing and operating environment. The composite resistor may be used as a feedback loop resistor, or may be used as a source degenerate resistor to control the supply current to the oscillator.
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patent: 6788577 (2004-09-01), Mihara
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