Compact system and method for chemical-mechanical polishing util

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566391, 156345, 1566451, 216 89, 216 91, 437225, H01L 2100

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active

055229654

ABSTRACT:
A compact system and method for chemical-mechanical polishing. A polishing pad (114) is attached to a non-rotating platen (112) and used to polish a wafer (116). Rotating arm (118) positions the wafer (116) over the pad (114) and applies pressure. Energy (e.g. ultrasonic) is coupled from device (122) to the platen (112). Energy is thus applied to the pad/wafer interface to aid in the removal of surface material from wafer (116) and for pad conditioning. New slurry is added to wash the particles off the edges of the pad (114).

REFERENCES:
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Robert Kolenkow, Ron Nagahara, Cybeq Systems, Menlo Park, California, "Chemical-Mechanical Wafer Polishing and Planarization in Batch Systems", Solid State Technology, Jun. 1992, pp. 112-114.
F. B. Kaufman, D. B. Thompson, R. E. Broadie, M. A. Jaso, W. L. Guthrie, D. J. Pearson and M. B. Small; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 and IBM General Technology Division, Hopewell, New York 10953, "Chemical-Mechanical Polishing For Fabricating Patterned W Metal Features As Chip Interconnects".
J. Electrochem. Soc., vol. 138, No. 11, Nov. 1991, The Electrochemical Society, Inc., pp. 3460-3464.
William J. Patrick, William L. Guthrie, Charles L. Standley, and Paul M. Schiable, IBM General Technology Division, East Fishkill Facility, Hopewell Junction, New York 12533, "Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections".
J. Electrochem. Soc., vol. 138, No. 6, Jun. 1991, The Electrochemical Society, Inc., pp. 1778-1784.

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