Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-07-13
2000-02-29
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, H01L 2776
Patent
active
06031267&
ABSTRACT:
A 6-T SRAM cell having a MOS transistor with source/drain regions having an absence of heavily doped portions characteristic of prior art lightly doped drain (LDD) MOS devices is fabricated. Forming the MOS transistor with an absence of heavily doped portions of source/drain regions allows the width of the MOS gate layer, the width of the MOS source/drain regions and the width of the field oxide region between active regions of the SRAM cell to be reduced compared to the prior art. Accordingly, the present SRAM cell occupies less chip area than a prior art SRAM cell. Further, forming the MOS transistor without heavily doped portions of source/drain regions improves latch-up immunity and decreases write cycle time of the present SRAM cell.
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Integrated Device Technology Inc.
Meier Stephen D.
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