Compact SRAM cell with FinFET

Details Compact SRAM cell with FinFET Compact SRAM cell with FinFET

2005-08-02

2005-08-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Fet configuration adapted for use as static memory cell

C257S067000, C257S068000, C257S069000, C257S379000, C257S380000, C257S381000, C257S904000

Reexamination Certificate

active

06924560

ABSTRACT:
A method and system is disclosed for an SRAM device cell having at least one device of a first semiconductor type and at lease one device of a second semiconductor type. The cell has a first device of the first type constructed as a part of a first FinFET having one or more devices of the first type, a first device of the second type whose poly region is an extension of a poly region of the first device of the first type with no contact needed to connect therebetween, wherein the two devices are constructed using a silicon-on-insulator (SOI) technology so that they are separated by an insulator region therebetween so as to minimize the distance between the two devices.

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