Compact semiconductor structure

Details Compact semiconductor structure Compact semiconductor structure

2005-03-08

2005-03-08

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S640000

Reexamination Certificate

active

06864170

ABSTRACT:
A method for reducing capacitative coupling between interconnects on a semiconductor structure includes producing a first insulating layer on a semiconductor substrate and etching trenches in the first insulating layer. Metallic interconnects are formed in the trenches by metallization. The semiconductor structure is polished to remove metal from the first insulating layer, leaving behind metal in the trenches. A portion of the first insulating layer between the first and second metallic interconnects is etched so that the first and second metallic interconnects project above the first insulating layer. A second insulating layer is applied on the substrate such that the metallic interconnects project into the second insulating layer. The second insulating layer has a relative permittivity that is lower than the relative permittivity of the first insulating layer.

REFERENCES:
patent: 5747880 (1998-05-01), Havemann et al.
patent: 5751066 (1998-05-01), Havemann
patent: 5843845 (1998-12-01), Chung
patent: 6066577 (2000-05-01), Cooney, III et al.
patent: 6222269 (2001-04-01), Usami
patent: 6306754 (2001-10-01), Agarwal
patent: 6376911 (2002-04-01), Ryan et al.
patent: 6566241 (2003-05-01), Chun
patent: 43 19070 (1994-01-01), None
patent: 0 687004 (1995-12-01), None
patent: 0 759635 (1997-02-01), None
patent: 0 860880 (1998-08-01), None
patent: 11163523 (1999-06-01), None
patent: 11354638 (1999-12-01), None
patent: 2001 68548 (2001-03-01), None

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