Compact process chamber for improved process uniformity

Details Compact process chamber for improved process uniformity Compact process chamber for improved process uniformity

2005-03-22

2005-03-22

Lund, Jeffrie R. (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C118S715000, C392S416000, C392S418000

Reexamination Certificate

active

06869485

ABSTRACT:
A semiconductor processing chamber, capable of withstanding low pressures while transmitting radiant energy, is provided in a lightweight, compact design. The inner surface of the window is preferably substantially flat and parallel to the wafer to be processed. The window is thin in a center portion and thicker in a surrounding peripheral portion. The thickness increases in the radially outward direction, defined between the flat inner surface and a concave outer surface. Deposition uniformity is improved by employing multiple outlet ports for distributing gas laterally in a short length, enabling a compact, symmetrical geometry. Preferably, a quadra-flow system of gas distribution is used, whereby the chamber contains one inlet port and three outlet ports distributed approximately at 90 degrees around a cylindrical side wall defining the chamber space.

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