Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-05
1997-12-02
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 41, 257 56, 257 69, 257369, 257371, 257377, 257903, H01L 2906, H01L 2904, H01L 2976, H01L 2711
Patent
active
056939752
ABSTRACT:
A structure for a complementary field effect transistor includes a semiconductor body having a first body region of a first conductivity type and an adjoining second body region of an opposite second conductivity type. A buried dielectric region is located in the semiconductor body beneath the upper semiconductor surface and extends into the first and second body regions. A first drain region of the second conductivity type is located in the semiconductor body and adjoins the first body region, the dielectric region and the upper semiconductor surface. A second drain region of the first conductivity type is located in the semiconductor body and adjoins the second body region, the dielectric region and the upper semiconductor surface. The two drain regions are adjacent to one another. The buried dielectric region underlies the two drain regions and contacts portions of both drain regions so as to (a) isolate the first drain region from the second body region and (b) isolate the second drain region from the first body region. The transistor structure can be fabricated according to processes in which formation of the body regions is initiated before or after the dielectric region is formed.
REFERENCES:
patent: 4700454 (1987-10-01), Baerg et al.
patent: 4778775 (1988-10-01), Tzeng
patent: 4862232 (1989-08-01), Lee
patent: 5043778 (1991-08-01), Teng et al.
patent: 5187122 (1993-02-01), Bonis
patent: 5429958 (1995-07-01), Matlock
Integrated Device Technology Inc.
Martin Wallace Valencia
Saadat Mahshid D.
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