Compact nonvolatile semiconductor memory device using stacked ac

Details Compact nonvolatile semiconductor memory device using stacked ac Compact nonvolatile semiconductor memory device using stacked ac

1991-06-06

1992-12-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365185, 365104, 257379, 257530, H01L 2968, H01L 2934, H01L 2702, G11C 1134

Patent

active

051721996

ABSTRACT:
A nonvolatile semiconductor memory device including a semiconductor substrate, a pair of impurity diffusion regions provided in the substrate, a gate region provided between the pair of impurity diffusion regions, a first gate electrode stacked on the gate region via a first dielectric film, and a second gate electrode stacked on the first gate electrode via a second dielectric film, the first gate electrode being electrically short-circuited to one of the impurity diffusion regions.

REFERENCES:
patent: 4881114 (1989-11-01), Mohsen et al.

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