Compact multiport static random access memory cell

Details Compact multiport static random access memory cell Compact multiport static random access memory cell

1996-06-26

1998-05-19

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 36523005, 257903, G11C 1100

Patent

active

057544689

ABSTRACT:
A new static random access memory cell for standard logic CMOS processes with three or more metal layers is detailed. The method uses three P-type and three N-type MOS transistors to form a two-port memory cell, which can be configured to perform as a one port, or a two port memory cell. In addition to standard memory applications, specialty memories, like a First-In First-Out (FIFO) buffer, which can benefit from the natural 2-port structure of our invention, are particularly appealing. Additional ports can be added for applications like a 3-port microprocessor register array.

REFERENCES:
patent: 4779226 (1988-10-01), Haraszti
patent: 5355331 (1994-10-01), Takase et al.
patent: 5555208 (1996-09-01), Nishihara

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